Intel for the last few years has been undergoing a major period of manufacturing expansion for the company. While the more recent announcements of new facilities in Ohio and Germany have understandably taken a lot of the spotlight – especially given their importance to Intel’s Foundry Services plans – Intel has been working even longer on expanding their existing facilities for their own use. The company’s development of next-generation EUV and Gate-All-Around-style transistors (RibbonFET) not only requires creating and refining the underlying technology, but it also just flat out requires more space. A lot of it.
To that end, Intel today is holding a grand opening in Oregon for the Mod3 expansion of D1X, the company’s primary development fab. The expansion, first announced back in 2019, is the third such mod (module) and second expansion for Intel’s main dev fab to be built since D1X’s initial construction in 2010. And in keeping with tradition for Intel fab launches and expansions, the company is making something of an event of it, including bringing Oregon’s governor out to show off their $3 Billion investment.
But fanfare aside, the latest mod for the fab is a genuinely important one for Intel: not only does it add a further 270,000 square feet of clean room space to the facility – expanding D1X by about 20% – but it’s the only fab module that’s big enough to support the High Numerical Aperture (High NA) EUV tool that Intel will be using starting with its 18A process. ASML’s forthcoming TWINSCAN EXE:5200 EUV tool is designed to be their most powerful yet, but it’s also quite a bit larger than the NXE 3000 series EUV tools Intel is using for their first generation EUV processes (Intel 4/3). It’s so big that D1X’s ceiling is too low to fit the machine, never mind support its weight.
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